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參數(shù)資料
| 型號： | HB52F649E1 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| 中文描述： | 注冊使用512 MB SDRAM的內(nèi)存64 Mword】72位，133 MHz內(nèi)存總線，1銀模塊（18件64 M】4組件）PC133SDRAM |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 143K |
| 代理商： | HB52F649E1 |
HB52F649E1-75B
Data Sheet E0021H10
13
Relationship Between Frequency and Minimum Latency
HB52F649E1-75B
Parameter
133
CE
latency
= 4
100
CE
latency
= 3
Frequency (MHz)
t
CK
(ns)
Active command to column command (same bank)
Symbol
PC100
Symbol 7.5
10
Notes
I
RCD
I
RC
3
2
1
Active command to active command (same bank)
9
7
= [I
RAS
+ I
RP
]
1
Active command to precharge command (same bank) I
RAS
Precharge command to active command (same bank) I
RP
Write recovery or data-in to precharge command
(same bank)
6
5
1
3
2
1
I
DPL
Tdpl
1
1
1
Active command to active command (different bank)
I
RRD
I
SREX
I
APW
2
2
1
Self refresh exit time
Tsrx
2
2
2
Last data in to active command
(Auto precharge, same bank)
Tdal
4
3
= [I
DPL
+ I
RP
]
Self refresh exit to command input
I
SEC
9
7
= [I
RC
]
3
Precharge command to high impedance
I
HZP
I
APR
Troh
4
3
Last data out to active command
(auto precharge) (same bank)
0
0
Last data out to precharge (early precharge)
I
EP
I
CCD
I
WCD
I
DID
I
DOD
I
CLE
I
RSA
I
CDD
I
PEC
–
3
–
2
Column command to column command
Tccd
1
1
Write command to data in latency
Tdwd
1
1
DQMB to data in
Tdqm
1
1
DQMB to data out
Tdqz
3
3
CKE to CK disable
Tcke
2
2
Register set to active command
S
to command disable
Tmrd
1
1
0
0
Power down exit to command input
Notes: 1. I
RCD
to I
RRD
are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
1
1
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| HB52F649E1-75B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52F649E1-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649EN-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus PC133 SDRAM |
| HB52R1289E22 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
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