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參數(shù)資料
| 型號： | HB52E89EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 44/64頁 |
| 文件大?。?/td> | 2741K |
| 代理商： | HB52E89EM |
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HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
44
READ to WRITE Command Interval (1)
READ to WRITE Command Interval (2)
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the write command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, DQMB must be set High so
that the output buffer becomes High-Z before data input.
Write command to Read command interval:
1. Same bank, same ROW address:
When the read command is executed at the same ROW address of the
same bank as the preceding write command, the read command can be performed after an interval of no less
than 1 clock. However, in the case of a burst write, data will continue to be written until one cycle before the
read command is executed.
CK
Command
Dout
in B2
in B3
READ
WRIT
in B0
in B1
High-Z
Din
CL=2
CL=3
DQMB
Burst Length = 4
Burst write
CK
Command
Dout
READ
WRIT
Din
CL=2
CL=3
DQMB
High-Z
2 clock
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E169E12 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E89EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52F168GB-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM |
| HB52F328DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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