參數(shù)資料
型號(hào): HB52D48GB
廠商: Hitachi,Ltd.
英文描述: 32 MB Unbuffered SDRAM Micro DIMM(32MB 未緩沖同步DRAM DIMM)
中文描述: 32兆微型無(wú)緩沖SDRAM的內(nèi)存(32MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 15/24頁(yè)
文件大?。?/td> 95K
代理商: HB52D48GB
HB52D48GB-F
15
DC Characteristics
(Ta = 0 to 65
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
HB52D48GB
-A6F/B6F/A6FL/B6FL
Parameter
Symbol Min
Max
Unit
Test conditions
Notes
Operating current
I
CC1
260
mA
Burst length = 1
t
RC
= min
CKE0 = V
IL
, t
CK
= 12 ns 6
CKE0 = V
IL
, t
CK
=
1, 2, 3
Standby current in power down I
CC2P
Standby current in power down
(input signal stable)
6
mA
I
CC2PS
4
mA
7
Standby current in non power
down
I
CC2N
40
mA
CKE0,
S
= V
IH
,
t
CK
= 12 ns
CKE0,
S
= V
IH
,
t
CK
= 12 ns
CKE0,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= 12 ns, BL = 4
t
RC
= min
V
IH
V
– 0.2 V
V
IL
0.2 V
4
Active standby current in power
down
I
CC3P
16
mA
1, 2, 6
Active standby current in non
power down
I
CC3N
72
mA
1, 2, 4
Burst operating current
I
CC4
I
CC5
I
CC6
260
mA
1, 2, 5
Refresh current
440
mA
3
Self refresh current
4
mA
8
Self refresh current
(L-version)
I
CC6
1.6
mA
Input leakage current
I
LI
I
LO
–10
10
μ
A
μ
A
0
Vin
V
CC
0
Vout
V
CC
DQ = disable
Output leakage current
–10
10
Output high voltage
V
OH
V
OL
2.4
V
I
OH
= –4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK0/CK1 operating current.
7. After power down mode, no CK0/CK1 operating current.
8. After self refresh mode set, self refresh current.
0.4
V
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