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參數(shù)資料
| 型號(hào)： | HAT3021R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N/P Channel Power MOS FET Power Switching |
| 中文描述： | 硅N / P系列頻道功率MOS場(chǎng)效應(yīng)管電源開關(guān) |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 150K |
| 代理商： | HAT3021R |
Rev.2.00, Oct.06.2004, page 1 of 10
HAT3021R
Silicon N/P Channel Power MOS FET
Power Switching
REJ03G0415-0200
Rev.2.00
Oct.06.2004
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
1234
5
6
7
8
G
D
S
D
G
D
S
D
Nch
Pch
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
Nch
80
±20
3.4
20.4
3.4
1.5
Pch
–80
±20
–2.6
–15.6
–2.6
1.5
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
V
DSS
V
GSS
I
D
V
V
A
A
A
W
°
C
°
C
I
D(pulse)
Note1
I
DR
Pch
Note2
Tch
Tstg
150
–55 to +150
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