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參數(shù)資料
| 型號(hào)： | HAT3004R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel / P Channel Power MOS FET High Speed Power Switching( N/ P 溝道功率 MOSFET) |
| 中文描述： | 硅?頻道/ P通道功率MOS FET的高速電源開(kāi)關(guān)（N / P系列溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 4/14頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | HAT3004R |
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HAT3004R
4
Electrical Characteristics (P channel)
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
—
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
10
μ
A
μ
A
V
GS
=
±
16V, V
DS
= 0
V
DS
= –30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.5
V
V
DS
= –10V,
I
D
= –1mA
I
D
= –2A, V
GS
= –10V
I
D
= –2A, V
GS
= –4V
I
D
= –2A, V
DS
= –10V
V
DS
= –10V
V
GS
= 0
f = 1MHz
Static drain to source on state R
DS(on)
resistance
—
0.12
0.16
S
Note4
R
DS(on)
|y
fs
|
Ciss
—
0.20
0.34
Note4
Forward transfer admittance
2.5
3.5
—
Note4
Input capacitance
—
350
—
pF
Output capacitance
Coss
—
230
—
pF
Reverse transfer capacitance Crss
—
75
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
18
—
ns
V
GS
= –4V, I
D
= –2A
V
DD
–10V
Rise time
—
110
—
ns
Turn-off delay time
—
20
—
ns
Fall time
—
30
—
ns
Body–drain diode forward
voltage
—
–1.0
–1.5
V
IF = –3.5A, V
GS
= 0
Note4
Body–drain diode reverse
recovery time
Note:
4. Pulse test
t
rr
—
60
—
ns
IF = –3.5A, V
GS
= 0
diF/ dt =20A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT3004R-EL | 制造商:HITACHI 功能描述: |
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| HAT3005R | 制造商:Renesas Electronics Corporation 功能描述:HAT3005R - Tape and Reel |
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