參數(shù)資料
型號(hào)： HAT2049T
廠商： Hitachi,Ltd.
英文描述： Silicon N Channel Power MOS FET High Speed Power Switching
中文描述： 硅?通道功率MOS FET的高速電源開關(guān)
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 52K
代理商： HAT2049T
HAT2049T
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
30
V
Gate to source voltage
±
12
V
Drain current
8
A
Drain peak current
Note1
64
A
Body-drain diode reverse drain current
8
A
Channel dissipation
1.3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
– 55 to + 150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
30
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
12 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 4 A, V
GS
= 4 V
Note3
I
D
= 4 A, V
GS
= 2.5 V
Note3
I
D
= 4 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1MHz
±
12
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
1
Gate to source cutoff voltage
0.4
—
1.4
V
Static drain to source on state
—
0.013
0.017
resistance
—
0.017
0.025
Forward transfer admittance
13
20
—
S
Input capacitance
—
1430
—
pF
Output capacitance
Coss
—
410
—
pF
Reverse transfer capacitance
Crss
—
265
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
23
—
ns
V
GS
= 4 V, I
D
= 4 A
V
DD
10 V
Rise time
—
165
—
ns
Turn-off delay time
—
215
—
ns
Fall time
—
185
—
ns
Body–drain diode forward voltage
—
0.83
1.08
V
IF = 8 A , V
GS
= 0
Note3
IF = 8 A, V
= 0
diF/ dt = 20 A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
—
30
—
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HAT2050T 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching
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