參數(shù)資料
型號(hào): HAT2040R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET(N溝道功率MOSFET)
中文描述: 硅?通道功率場(chǎng)效應(yīng)晶體管(不適用溝道功率MOSFET的)
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 33K
代理商: HAT2040R
HAT2040R
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
V
I
D
= 10mA, V
GS
= 0
Gate to source leak current
I
GSS
I
DSS
±
0.1
μ
A
μ
A
V
GS
=
±
20V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
Zero gate voltage drain
current
1
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
V
DS
= 10V,
I
D
= 1mA
I
D
= 8A, V
GS
= 10V*
1
I
D
= 8A, V
GS
= 4V*
1
I
D
= 8A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Static drain to source on state R
DS(on)
resistance
6.2
8.0
m
m
R
DS(on)
|y
fs
|
Ciss
9.0
13.0
Forward transfer admittance
18
30
S
Input capacitance
4400
pF
Output capacitance
Coss
1100
pF
Reverse transfer capacitance
Crss
500
pF
Total gate charge
Qg
90
nc
V
DD
= 10V
V
GS
= 10V
I
D
= 15A
V
GS
= 4V, I
D
= 8A
V
DD
10V
Gate to source charge
Qgs
15
nc
Gate to drain charge
Qgd
18
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
110
ns
Rise time
410
ns
Turn-off delay time
200
ns
Fall time
230
ns
Body to drain diode forward
voltage
0.9
V
I
F
= 15A, V
GS
= 0*
1
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
55
ns
I
= 15A, V
= 0
diF/ dt = 20A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HAT2040R-EL 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 15A 8SOP - Tape and Reel
HAT2040R-EL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching
HAT2042 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching
HAT2042T 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching
HAT2043 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching