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參數(shù)資料
| 型號： | HAT2039R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| 中文描述： | 硅?通道功率場效應晶體管（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 131K |
| 代理商： | HAT2039R |
HAT2039R
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1 %
2.1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Electrical Characteristics (Ta = 25
°
C)
Note:
4.Pulse test
Channel dissipation
Channel temperature
Storage temperature
Pch
Note3
Tch
Tstg
3.0
150
– 55 to + 150
W
°
C
°
C
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
30
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
—
—
0.4
—
—
13
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.017
0.022
20
1420
410
260
20
12
8
23
165
215
185
0.85
30
±
0.1
1
1.4
0.022
0.032
—
—
—
—
—
—
—
—
—
—
—
1.1
—
μ
A
μ
A
V
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
V
GS
=
±
12 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 4 A, V
GS
= 4 V
Note4
I
D
= 4 A, V
GS
= 2.5 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
DD
= 10 V
V
GS
= 4 V
I
D
= 8 A
V
GS
= 4 V, I
D
= 4 A
V
DD
@ 10 V
IF = 8.0 A, V
GS
= 0
Note4
IF = 8.0 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
Item
Symbol
Ratings
Unit
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