- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370426 > HAT2033R (Hitachi,Ltd.) Silicon N Channel Power MOS FET(N溝道功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | HAT2033R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| 中文描述： | 硅?通道功率場(chǎng)效應(yīng)晶體管（不適用溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 137K |
| 代理商： | HAT2033R |
HAT2033R/HAT2033RJ
2
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1 %
2.When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
3.Value at Tch=25
°
C, Rg
≥
50
Electrical Characteristics (Ta = 25
°
C)
Note:
4.Pulse test
Avalanche energy
HAT2033R
HAT2033RJ
E
AR Note4
—
4.2
2.5
150
– 55 to + 150
—
mJ
W
°
C
°
C
Channel dissipation
Channel temperature
Storage temperature
Pch
Note2
Tch
Tstg
Item
Drain to source breakdown voltage
Symbol Min
V
(BR)DS
S
V
(BR)GS
S
I
GSS
I
DSS
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
60
Gate to source breakdown voltage
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltage
drain current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
—
—
—
—
—
—
—
—
—
—
—
0.03
0.04
10
740
370
130
13
55
140
95
0.82
45
±
10
1
0.1
—
10
2.2
0.038
0.053
—
—
—
—
—
—
—
—
1.07
—
μ
A
μ
A
μ
A
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
HAT2033R
HAT2033RJ I
DSS
HAT2033R
HAT2033RJ I
DSS
I
DSS
V
DS
=4 8V , V
GS
= 0
Ta = 125
°
C
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 4 A, V
GS
= 10 V
Note4
I
D
= 4 A, V
GS
= 4 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
GS
=10 V, I
D
= 4 A
V
DD
@ 30 V
V
GS(off)
1.2
R
DS(on)
—
R
DS(on)
—
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
6.5
—
—
—
—
—
—
—
—
—
IF = 7 A, V
GS
= 0
Note4
IF = 7 A , V
GS
= 0
diF/ dt = 50 A/
μ
s
Item
Symbol
Ratings
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAT2033RJ | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| HAT2033 | Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2036R | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| HAT2037T | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| HAT2038RJ | Silicon N Channel Power MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2033R/HAT2033RJ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| HAT2033R-EL | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 60V 7A 8SOP TAPE - Tape and Reel |
| HAT2033R-EL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2033RJ | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2033RJ-EL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。