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參數(shù)資料
| 型號(hào)： | HAT2031T |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| 中文描述： | 硅?通道功率場(chǎng)效應(yīng)晶體管（不適用溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | HAT2031T |
HAT2031T
3
Electrical Characteristics (Ta = 25
°
C)
Note:
4.Pulse test
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
S
20
Gate to source breakdown voltage V
(BR)GS
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
±
12
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
—
—
0.5
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
0.054
0.074
7
300
185
90
13
75
60
75
0.85
35
±
10
1
1.5
0.070
0.098
—
—
—
—
—
—
—
—
1.11
—
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
V
GS
=
±
10 V, V
DS
= 0
V
DS
= 12 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1m A
I
D
= 2 A, V
GS
= 4 V
Note4
I
D
= 2 A, V
GS
= 2.5 V
Note4
I
D
= 2 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
GS
= 4 V, I
D
= 2 A
V
DD
@ 10 V
IF = 3.5 A, V
GS
= 0
Note4
IF = 3.5 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
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