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參數(shù)資料
| 型號(hào)： | HAT2019R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 50K |
| 代理商： | HAT2019R |
HAT2019R
3
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
50
40
30
20
10
0
2
4
6
8
10
10VTypical Output Characteristics
4.5 V
4 V
50
40
30
20
10
0
1
2
3
4
5
Ta = 25 °C
1 shot Pulse
PW=10ms
10 μs
100 μs
3.5 V
3 V
2.5 V
2 V
V = 1.5 V
Tc = 75°C
25°C
–25°C
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Pulse Test
V = 10 V
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Operation in
this area is
limited by R
DS(on)
Noe4
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| HAT2020R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
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