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參數(shù)資料
| 型號： | HAT2016R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HAT2016R |
HAT2016R
5
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
Case Temperature Tc (
°
C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
2 A
1 A
I = 5 A
0.2
0.5
1
2
5
10
20
0.2
0.1
0.02
0.05
0.01
0.005
10 V
V = 4 V
0.08
0.06
0.04
0.02
–40
0
40
80
120
160
0
I = 1 A, 2 A, 5 A
1 A, 2 A, 5 A
10 V
V = 4 V
0.2
0.5
1
2
5
10
20
20
10
2
5
1
0.2
0.5
25
°
C
Tc = –25
°
C
75
°
C
Pulse Test
V = 10 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2016R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2019R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2020R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2020R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2022R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
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