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參數(shù)資料
| 型號： | HAT2009F |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HAT2009F |
Application
Power switching
Features
Low on–resistance
Capable of2.5V gate drive
Low drive current
High density mounting
Ordering Information
————————————————————
Hitachi Code
————————————————————
EIAJ Code
————————————————————
JEDEC Code
————————————————————
FP–8D
SC–527–8A
—
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body–drain diode reverse drain current
I
DR
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
When using the glass epoxy board (40
x
40
x
1.6 mm)
Symbol
Ratings
Unit
30
V
±10
V
5
A
20
A
5
A
1
W
150
°C
–55 to +150
°C
1234
5
6
7
8
SOP–8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
1 2
D D D
4
3
5 6
7 8
HAT2001F
Silicon N Channel Power MOS FET
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