參數(shù)資料
型號(hào)： HAT1126RJ-EL-E
廠商： Renesas Technology Corp.
英文描述： Silicon P Channel Power MOS FET High Speed Power Switching
中文描述： 硅P通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 121K
代理商： HAT1126RJ-EL-E
Rev.1.00 Sep. 10, 2004 page 1 of 7
HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0406-0100
Rev.1.00
Sep.10.2004
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
1234
5
6
7
8
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25
°
C)
Ratings
Item
Symbol
HAT1126R
–60
±
20
–6.0
–48
—
—
2
3
150
–55 to +150
HAT1126RJ
–60
±
20
–6.0
–48
–6.0
3.08
2
3
150
–55 to +150
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
4. Value at Tch = 25
°
C, Rg
≥
50
V
DSS
V
GSS
I
D
V
V
A
A
A
mJ
W
W
°
C
°
C
I
D
(pulse)
Note1
I
AP
E
AR
Pch
Note2
Pch
Note3
Tch
Tstg
Note4
Note4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HAT1127H-EL-E 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET, P-CHANNEL - Tape and Reel 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 40A 5-Pin(4+Tab) LFPAK T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 40A 5-Pin(4+Tab) LFPAK T/R
HAT1128R-EL-E 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 18A 8-Pin SOP
HAT1129R-EL-E 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET, P-CHANNEL - Tape and Reel
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