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參數(shù)資料
| 型號(hào)： | HAT1110R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET Power Switching |
| 中文描述： | 硅P通道功率MOS場(chǎng)效應(yīng)管電源開關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | HAT1110R |
Rev.2.00, Oct.07.2004, page 1 of 7
HAT1110R
Silicon P Channel Power MOS FET
Power Switching
REJ03G0416-0200
Rev.2.00
Oct.07.2004
Features
Capable of –4.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
1234
5
6
7
8
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
Pch
Note3
Tch
Tstg
Ratings
–80
±20
–1
–6
–1
1.2
1.8
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
Note1
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|---|---|
| HAT1110R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET Power Switching |
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