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參數資料
| 型號： | HAT1043M |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET Power Switching |
| 中文描述： | 硅P通道功率MOS場效應管電源開關 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 50K |
| 代理商： | HAT1043M |
HAT1043M
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
(pulse)
Pch
–20
V
Gate to source voltage
±
12
V
Drain current
–4.4
A
Drain peak current
Note 1
–17.6
A
Body-drain diode reverse drain current
Note 2
–4.4
A
Channel dissipation
Note 2
2.0
W
(continuous)
Note 3
1.05
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW
≤
5 s, Ta = 25
°
C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
–20
—
—
V
I
D
= –10 mA, V
GS
= 0
V
GS
=
±
12 V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –3 A, V
GS
= –4.5 V
Note 1
I
D
= –3 A, V
GS
= –2.5 V
Note 1
I
D
= –3 A, V
DS
= –10 V
Note 1
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
–1
Gate to source cutoff voltage
–0.4
—
–1.4
V
Static drain to source on state
—
55
65
m
m
resistance
—
85
110
Forward transfer admittance
|y
fs
|
Ciss
4
7
—
S
Input capacitance
—
750
—
pF
Output capacitance
Coss
—
310
—
pF
Reverse transfer capacitance
Crss
—
220
—
pF
Total Gate charge
Qg
—
11
—
nc
V
DD
= –10 V
V
GS
= –4.5 V
I
D
= –4.4 A
V
GS
= –4.5 V, I
D
= –3 A
R
L
= 3.3
Gate to Source charge
Qgs
—
2
—
nc
Gate to Drain charge
Qgd
—
3.5
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
15
—
ns
Rise time
—
100
—
ns
Turn-off delay time
—
85
—
ns
Fall time
—
100
—
ns
Body–drain diode forward voltage
—
–0.95
–1.23
V
I
F
= –4.4 A, V
GS
= 0
I
= –4.4 A, V
= 0
diF/ dt = –20 A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
50
—
ns
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