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參數(shù)資料
| 型號： | HAT1036R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET Power Switching |
| 中文描述： | 硅P通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 50K |
| 代理商： | HAT1036R |
HAT1036R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
-30
V
Gate to source voltage
±
20
V
Drain current
-12
A
Drain peak current
Note1
-96
A
Body-drain diode reverse drain current
-12
A
Channel dissipation
Note2
2.5
W
Channel temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
-30
—
—
V
I
D
= -10 mA, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= -30 V, V
GS
= 0
V
DS
= -10 V,
I
D
= -1 mA
I
D
= -6 A, V
GS
= -10 V
I
D
= -6 A, V
GS
= -4 V
I
D
= -6 A, V
DS
= -10 V
Note1
V
DS
= -10 V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
-1
Gate to source cutoff voltage
-1.0
—
-2.5
V
Static drain to source on state
—
11
14
m
m
Note1
resistance
—
21
34
Note1
Forward transfer admittance
12
20
—
S
Input capacitance
—
4200
—
pF
Output capacitance
Coss
—
870
—
pF
Reverse transfer capacitance
Crss
—
360
—
pF
Total gate charge
Qg
—
70
—
nc
V
DD
= -10 V
V
GS
= -10 V
I
D
= -12 A
V
GS
= -4 V, I
D
= -6 A
V
DD
-10 V
Gate to source charge
Qgs
—
12
—
nc
Gate to drain charge
Qgd
—
14
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
120
—
ns
Rise time
—
350
—
ns
Turn-off delay time
—
100
—
ns
Fall time
—
120
—
ns
Body–drain diode forward voltage
—
-0.85
-1.11
V
I
F
= -12 A, V
GS
= 0
Note1
I
= -12 A, V
= 0
diF/ dt = 20 A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
55
—
ns
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