參數(shù)資料
型號(hào): HAT1031T
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 57K
代理商: HAT1031T
HAT1031T
3
Main Characteristics
2.0
1.5
1.0
0.5
0
50
100
150
200
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
PW=10 μs
100μs
1ms
–20
–16
–12
–8
–4
0
–2
–4
–6
–8
–10
V = –2.0 V
–10 V
–4 V
–3.5 V
–3 V
–10
–8
–6
–4
–2
0
–2
–4
–6
–8
GS
–10
Tc = –25 °C
75 °C
25 °C
–8 V
–6 V
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
2DieOeain
1DiveOpeaion
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
1 shot Pulse
1 Drive Operation
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Noe5
(PW<10s
V = –10 V
Pulse Test
–2.5 V
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