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參數(shù)資料
| 型號(hào)： | HAT1030T |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | HAT1030T |
HAT1030T
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
–12
V
Gate to source voltage
±
10
V
Drain current
–3
A
Drain peak current
Note1
–24
A
Body-drain diode reverse drain current
–3
A
Channel dissipation
1
W
Channel dissipation
Pch
Note3
1.5
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–12
—
—
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
V
GS
=
±
8V, V
DS
= 0
V
DS
= –12 V, V
GS
= 0
V
DS
= –10V,
I
D
= –1mA
I
D
= –2A, V
GS
= –4V
Note4
I
D
= –2A, V
GS
= –2.5V
Note4
I
D
= –2A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
Zero gate voltege drain current
—
—
–1
Gate to source cutoff voltage
–0.5
—
–1.5
V
Static drain to source on state
—
(0.085)
(0.1)
resistance
—
(0.12)
(0.18)
Forward transfer admittance
(TBD)
(TBD)
—
S
Input capacitance
—
(TBD)
—
pF
Output capacitance
Coss
—
(TBD)
—
pF
Reverse transfer capacitance
Crss
—
(TBD)
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
(TBD)
—
ns
V
GS
= –4V, I
D
= –2A
V
DD
–10V
Rise time
—
(TBD)
—
ns
Turn-off delay time
—
(TBD)
—
ns
Fall time
—
(TBD)
—
ns
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