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參數(shù)資料
| 型號(hào)： | HAT1021R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | HAT1021R |
HAT1021R
3
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
10 μs
100 μs
1ms
PW=10ms
Noe4
Ta = 25 °C
1 shot pulse
–50
–40
–30
–20
–10
0
–10 V
–2
–4
–6
–8
–10
–8 V
–50
–40
–30
–20
–10
0
–1
–2
–3
–4
GS
–5
–6 V
–5 V
–4.5 V
V = –1.5 V
–4 V
–3.5 V
–2.5 V
–3 V
–2 V
Tc = –25 °C
25 °C
75 °C
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = –10 V
Pulse Test
DCOpeaionPW<10s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT1021R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 5.5A 8-Pin SOP T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 5.5A 8-Pin SOP T/R |
| HAT1023R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 20V 7A 8SOP - Tape and Reel |
| HAT1023R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOSFET High Speed Power Switching |
| HAT1024 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1024R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 30V 3.5A 8SOP - Tape and Reel |
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