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參數(shù)資料
| 型號(hào)： | HAL805UT-A |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Programmable Linear Hall Effect Sensor |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, -.5-0.5mT, 0.35-4.65V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封裝： | PLASTIC, TO-92UT, 3 PIN |
| 文件頁數(shù)： | 16/24頁 |
| 文件大?。?/td> | 373K |
| 代理商： | HAL805UT-A |
HAL805
PRELIMINARY DATA SHEET
16
Micronas
–
1
–
0.8
–
0.6
–
0.4
–
0.2
–
0.0
0.2
0.4
0.6
0.8
1.0
4
5
6
7
8 V
%
V
DD
E
R
V
OUT
/V
DD
= 0.82
V
OUT
/V
DD
= 0.66
V
OUT
/V
DD
= 0.5
V
OUT
/V
DD
= 0.34
V
OUT
/V
DD
= 0.18
Fig. 3
–
6:
Typical ratiometric error
versus supply voltage
0
–
50
20
40
60
80
100
120
0
50
100
150
200
°
C
%
T
A
1/sensitivity
TC = 16, TCSQ = 8
TC = 0, TCSQ = 12
TC =
–
20, TCSQ = 12
TC =
–
31, TCSQ = 0
Fig. 3
–
7:
Typical 1/sensitivity
versus ambient temperature
–
1
–
0.8
–
0.6
–
0.4
–
0.2
–
0.0
0.2
0.4
0.6
0.8
1.0
–
50
0
50
100
150
200
°
C
mT
T
A
B
Offset
TC = 16, TCSQ = 8
TC = 0, TCSQ = 12
TC =
–
20, TCSQ = 12
Fig. 3
–
8:
Typical magnetic offset
versus ambient temperature
–
1
–
0.8
–
0.6
–
0.4
–
0.2
–
0.0
0.2
0.4
0.6
0.8
1.0
–
40
–
20
0
20
40 mT
%
B
INL
Range = 30 mT
Fig. 3
–
9:
Typical nonlinearity
versus magnetic field
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAL805UT-E | Programmable Linear Hall Effect Sensor |
| HAL805UT-K | Programmable Linear Hall Effect Sensor |
| HAL815 | Programmable Linear Hall Sensor |
| HAL815A | Programmable Linear Hall Sensor |
| HAL815E | Programmable Linear Hall Sensor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAL805UT-E | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Effect Sensor |
| HAL805UT-K | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Effect Sensor |
| HAL810 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
| HAL815 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Sensor |
| HAL815_1 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
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