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參數(shù)資料
| 型號： | HAL800UT-E |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Programmable Linear Hall Effect Sensor |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.80V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封裝： | PLASTIC, TO-92UT, 3 PIN |
| 文件頁數(shù)： | 5/24頁 |
| 文件大?。?/td> | 347K |
| 代理商： | HAL800UT-E |
HAL800
Micronas
5
2. Functional Description
2.1. General Function
The
HAL 800
is a monolithic integrated circuit which
provides an output voltage proportional to the mag-
netic flux through the Hall plate and proportional to the
supply voltage.
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. This voltage is converted to a digital value,
processed in the Digital Signal Processing Unit (DSP)
according to the EEPROM programming, converted to
an analog voltage with ratiometric behavior, and stabi-
lized by a push-pull output transistor stage. The func-
tion and the parameters for the DSP are detailed
explained in
Section 2.2. on page 7
.
The setting of the LOCK register disables the program-
ming of the EEPROM memory for all time. This regis-
ter cannot be reset.
As long as the LOCK register is not set, the output
characteristic can be adjusted by modifying the
EEPROM registers. The IC is addressed by modulat-
ing the supply voltage
(see Fig. 2
–
1)
. In the supply
voltage range from 4.5 V up to 5.5 V, the sensor gener-
ates an analog output voltage. After detecting a com-
mand, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
analog output is switched off during the communica-
tion.
Internal temperature compensation circuitry and the
choppered offset compensation enables operation
over the full temperature range with minimal changes
in accuracy and high offset stability. The circuitry also
rejects offset shifts due to mechanical stress from the
package. The non-volatile memory is equipped with
redundant EEPROM cells. In addition, the sensor IC is
equipped with devices for overvoltage and reverse volt-
age protection at all pins.
Fig. 2
–
1:
Programming with V
DD
modulation
Fig. 2
–
2:
HAL800 block diagram
V
O
5
6
7
8
V
D
HAL
800A
V
DD
GND
OUT
analog
V
DD
digital
Internally
stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Oscillator
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
D/A
Converter
Analog
Output
OUT
V
DD
GND
Supply
Level
Detection
EEPROM Memory
Lock Control
Digital
Output
Protection
Devices
100
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PDF描述 |
|---|---|
| HAL800UT-K | Programmable Linear Hall Effect Sensor |
| HAL805 | Programmable Linear Hall Effect Sensor |
| HAL805UT-A | Programmable Linear Hall Effect Sensor |
| HAL805UT-E | Programmable Linear Hall Effect Sensor |
| HAL805UT-K | Programmable Linear Hall Effect Sensor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HAL800UT-K | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Effect Sensor |
| HAL805 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Effect Sensor |
| HAL805-1 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
| HAL805UT-A | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall-Effect Sensor |
| HAL805UT-E | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Programmable Linear Hall Effect Sensor |
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