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參數(shù)資料
| 型號： | HAL320 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Differential Hall Effect Sensor IC |
| 中文描述： | 差分霍爾效應傳感器IC |
| 文件頁數(shù)： | 11/13頁 |
| 文件大小： | 143K |
| 代理商： | HAL320 |
HAL320
11
Micronas
Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress on the sensor
must be avoided if the sensor is used under back-biased
conditions. This piezo sensitivity of the sensor IC cannot
be completely compensated for by the switching offset
compensation technique.
In order to assure switching the sensor on and off in a
back-biased application, the minimum magnetic modu-
lation of the differential field should amount to more than
10% of the magnetic preinduction.
If the HAL320 sensor IC is used in back-biased applica-
tions, please contact our Application Department. They
will provide assistance in avoiding applications which
may induce stress to the ICs. This stress may cause
drifts of the magnetic parameters indicated in this data
sheet.
For electromagnetic immunity, it is recommended to ap-
ply a 4.7 nF capacitor between V
DD
(pin 1) and Ground
(pin 2). For automotive applications, a 220 series re-
sistor to pin 1 is recommended. Because of the I
DD
peak
at 3.5 V, the series resistor should not be greater than
270
. The series resistor and the capacitor should be
placed as close as possible to the IC. For optimal EMC
behavior, the test circuits in Fig. 21 and Fig. 22 are rec-
ommended.
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient tem-
perature T
A
).
T
J
= T
A
+
T
At static conditions, the following equations are valid:
T = I
DD
* V
DD
* R
thJSB
–
for TO-92UA:
T = I
DD
* V
DD
* R
thJA
–
for SOT-89x:
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
Recommended Test Circuits
for Electromagnetic Compatibility
Test pulses V
EMC
corresponding to DIN 40839.
OUT
GND
3
2
1
V
DD
4.7 nF
V
EMC
V
P
R
V
220
R
L
1.2 k
20 pF
Fig. 21:
Test circuit 2: test procedure for class A
OUT
GND
3
2
1
V
DD
4.7 nF
V
EMC
R
V
220
R
L
680
Fig. 22:
Test circuit 1: test procedure for class C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HAL320SF-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Switch |
| HAL320SF-C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Switch |
| HAL320SF-E | 功能描述:IC HALL EFFECT SENSOR SOT-89B RoHS:否 類別:傳感器，轉(zhuǎn)換器 >> 磁性 - 霍爾效應，數(shù)字式開關，線性，羅盤 (IC) 系列:- 標準包裝:1 系列:- 傳感范圍:20mT ~ 80mT 類型:旋轉(zhuǎn) 電源電壓:4.5 V ~ 5.5 V 電流 - 電源:15mA 電流 - 輸出（最大）:- 輸出類型:數(shù)字式，PWM，8.5 位串行 特點:可編程 工作溫度:-40°C ~ 150°C 封裝/外殼:20-SSOP（0.209"，5.30mm 寬） 供應商設備封裝:20-SSOP 包裝:Digi-Reel® 其它名稱:AS5132-HSST-500DKR |
| HAL320SO-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Switch |
| HAL320SO-C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Switch |
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