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參數(shù)資料
| 型號(hào)： | HAL114SO-E |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Unipolar Hall Switch IC |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, -17-11mT, 0.13-0.28V, RECTANGULAR, SURFACE MOUNT |
| 封裝： | PLASTIC, SOT-89A, 4 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 127K |
| 代理商： | HAL114SO-E |
HAL114
MICRONAS INTERMETALL
5
Electrical Characteristics
, continued
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
I
OH
Output Leakage Current over
Temperature Range
3
–
–
10
μ
A
B < B
off
V
OH
= 24 V, T
J
< 150
°
C
I
DD
Supply Current
1
6
8.2
11
mA
T
J
= 25
°
C
I
DD
Supply Current over
Temperature Range
1
3.9
8.2
12
mA
t
en(O)
Enable Time of Output
after Setting of V
DD
3
–
6
10
μ
s
V
DD
= 12 V
t
r
Output Rise Time
3
–
85
400
ns
V
DD
= 12 V, RL = 820 Ohm,
CL = 20 pF
t
f
Output Fall Time
3
–
60
400
ns
V
DD
= 12 V, RL = 820 Ohm,
CL = 20 pF
R
thJSB
case
SOT-89A
Thermal Resistance Junction to
Substrate Backside
–
150
200
K/W
Fiberglass Substrate
pad size see Fig. 6
R
thJA
case
TO-92UA
Thermal Resistance
Junction to Soldering Point
–
150
200
K/W
Leads at ambient tempera-
ture at a distance of 2 mm
from case
Magnetic Characteristics
at T
J
= –40
°
C to +170
°
C, V
DD
= 4.5 V to 24 V,
Typical Characteristics for V
DD
= 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
–40
°
C
Typ.
25
°
C
Typ.
100
°
C
Typ.
170
°
C
Typ.
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
On point B
ON
7.5
21.5
36.0
7.0
21.3
34.0
6.3
19.6
31.5
6.0
19.2
31.0
mT
Off point B
OFF
4.3
17.4
33.2
4.0
17.6
31.2
3.6
16.1
28.9
3.6
15.8
28.8
mT
Hysteresis B
HYS
2.8
4.1
5.0
2.8
3.7
4.5
2.6
3.5
4.0
2.2
3.4
4.0
mT
B
OFF min
B
ON max
B
HYS
Output Voltage
Fig. 5:
Definition of switching points and hysteresis
B
OFF
B
ON
0
Fig. 6:
Recommended pad size SOT-89A
Dimensions in mm
5.0
2.0
2.0
1.0
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相關(guān)代理商/技術(shù)參數(shù) |
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| HAL114UA-A | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Unipolar Hall Switch IC |
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