參數(shù)資料
型號(hào): HAL114SF-C
廠(chǎng)商: MICRONAS SEMICONDUCTOR HOLDING AG
英文描述: Hall Effect Sensor Family
中文描述: 霍爾效應(yīng)傳感器系列
文件頁(yè)數(shù): 7/17頁(yè)
文件大?。?/td> 131K
代理商: HAL114SF-C
HAL11x
7
Micronas
3.6. Electrical Characteristics
at T
J
= –40
°
C to +140
°
C , V
DD
= 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T
J
= 25
°
C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply Current
1
6
8.2
11
mA
T
J
= 25
°
C
I
DD
Supply Current over
Temperature Range
1
3.9
8.2
12
mA
V
OL
Output Voltage over
Temperature Range
3
120
400
mV
I
OL
= 12.5 mA
V
OL
Output Voltage over
Temperature Range
3
190
500
mV
I
OL
= 20 mA
I
OH
Output Leakage Current
3
0.06
1
μ
A
B < B
off
,
T
J
= 25
°
C, V
OH
= 0 to 24 V
I
OH
Output Leakage Current over
Temperature Range
3
10
μ
A
B < B
off
,
V
OH
= 0 to 24V
t
en(O)
Enable Time of Output after
Setting of V
DD
1
6
10
μ
s
V
DD
= 12 V
B > B
ON
+ 2 mT or
B < B
OFF
– 2 mT
t
r
Output Rise Time
3
0.08
0.4
μ
s
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
t
f
Output Fall Time
3
0.06
0.4
μ
s
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
R
thJSB
case
SOT-89A
SOT-89B
Thermal Resistance Junction
to Substrate Backside
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–4
R
thJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
150
200
K/W
Fig. 3–4:
Recommended pad size SOT-89x
Dimensions in mm
5.0
2.0
2.0
1.0
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