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參數(shù)資料
| 型號(hào)： | HAF1009S |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開(kāi)關(guān)系列 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | HAF1009S |
Rev.1.00, May.13.2003, page 1 of 10
HAF1009(L), HAF1009(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0029-0100Z
(Previous ADE-208-1525 (Z))
Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
sencing
circuit
Latch
circuit
Gate
shut–
down
circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2, 4
3
1
2
3
1
2
4
4
3
相關(guān)PDF資料 |
PDF描述 |
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| HAF2012L | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012S | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB |
| HAF2014 | |
| HAF2015RJ | |
| HAF2017 | Datasheet|ADE-208-1637|MAR.01.03|124K |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF1010RJ | 制造商:Renesas Electronics Corporation 功能描述: |
| HA-F10C | 制造商:JVC Worldwide 功能描述:HEADPHONE |
| HAF10L | 功能描述:散熱片 Heatsk 116.8x25.4x61 For PFE Series RoHS:否 制造商:Ampro By ADLINK 產(chǎn)品:Heat Sink Accessories 安裝風(fēng)格:Through Hole 散熱片材料: 散熱片樣式: 熱阻: 長(zhǎng)度: 寬度: 高度: 設(shè)計(jì)目的:Express-HRR |
| HAF-10L | 制造商:TDK 功能描述:Heat sink,2.2deg.C/W,116.8x25.4x61mm |
| HA-F130AN | 制造商:JVC Worldwide 功能描述:HEADPHONE |
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