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參數(shù)資料
| 型號(hào)： | HA16148PS |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | AC/DC Switching Converter Controller IC With High-Voltage Power MOS FET |
| 中文描述： | AC / DC開關(guān)變換器控制IC與高壓電源MOS FET |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大小： | 113K |
| 代理商： | HA16148PS |
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HA16148PS
5
Electrical Characteristics
(Tj = 25
°
C, V
DD
= 12 V, fosc1 = 100 kHz)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Power
Drain-source voltage
BV
DSS
700
V
MOS FET
Drain-source on resistance
R
DS(on)
12
20
I
D
= 0.4 A
Starter
Start-up start drain voltage
V
DRN
55
75
95
V
circuit
Start-up charge current
I
CHG
125
250
500
μ
A
UVL circuit
Operation start power supply
voltage
V
TH
10
11
12
V
Operation stop power supply
voltage
V
TL
7
8
9
V
Operating power supply current
I
DD
2.5
4.0
mA
Oscillation
Normal mode operating frequency
fosc1
88
100
112
kHz
C
T
= 220 pF
circuit
F-down mode operating frequency
fosc2
23
26.5
30
kHz
C
T
= 220 pF, V
COMP
= 0 V
Maximum on duty
Dumax
70
75
%
Error
Open-loop voltage gain
A
V
50
65
dB
Rcomp = 220 k
amplifier
Unity gain bandwidth
BW
550
kHz
Rcomp = 220 k
Output high voltage 1
V
COMPH1
4.5
5.0
V
Iosource = 0
μ
A
Output high voltage 2
V
COMPH2
4.3
4.8
V
Iosource = 100
μ
A
Output low voltage
V
COMPL
0.3
0.7
V
Iosink = 0
μ
A
Non-inverting input voltage
V
(+)EA
3.4
3.8
4.2
V
Power
Output rise time
t
r
100
ns
C
L
= 1000 pF
MOS FET
Output fall time
t
f
80
ns
C
L
= 1000 pF
gate drive
Output high voltage
V
OH
10
V
Iosource = 25 mA
circuit
Output low voltage
V
OL
0.5
V
Iosink = 25 mA
Current
Current sense voltage gain
A
VCS
3.0
V/V
sense
Current sense response time
tpdcs
200
ns
Vcomp = 5.0 V
circuit
Leading edge blanking time
t
BL
300
ns
OVP latch
OVP latch set voltage
Vovp
4.2
5.0
5.8
V
Vovp: FB pin voltage
circuit
OVP latch reset voltage
Vovpr
4.0
V
Vovpr: VDD pin voltage
OVP latch current dissipation
Iovp
1.1
1.7
mA
V
FB
= 6.0 V
Remote
on/off circuit
Off mode start voltage
Voff
3.6
3.8
4.0
V
Voff: CT pin voltage
Soft start
circuit
Soft start time
tst
(1.0)
2.0
(3.0)
ms
Time from start-up to
max. duty
f-down
comparator
F-down mode start voltage
Vfdcp
0.7
0.85
1.0
V
Over
temperature
protection
circuit
Over temperature protection start
temperature
TSD
150
°
C
TSD: Power MOS FET
junction temperature
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