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參數(shù)資料
| 型號： | H9926CTS |
| 廠商： | HSMC CORP. |
| 英文描述： | Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) |
| 中文描述： | 雙N溝道增強型MOSFET（20V的，6A條） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | H9926CTS |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
H9926TS, H9926CTS
HSMC Product Specification
Electrical Characteristics
(T
A
=25
°
C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
V
GS
=2.5V, I
D
=5.2A
-
34
40
R
DS(on)
Drain-Source On-State Resistance
V
GS
=4.5V, I
D
=6A
-
25
30
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.6
-
1.5
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=20V, V
GS
=0V
-
-
1
uA
I
GSS
Gate-Body Leakage Current
V
GS
=
±
12V, V
DS
=0V
-
-
±
100
nA
g
FS
Forward Transconductance
V
DS
=10V, I
D
=6A
7
13
-
S
Dynamic
Q
g
Total Gate Charge
-
4.86
-
Q
gs
Gate-Source Charge
-
0.92
-
Q
gd
Gate-Drain Charge
V
DS
=10V, I
D
=6A, V
GS
=4.5V
-
1.4
-
nC
C
iss
Input Capacitance
-
562
-
C
oss
Output Capacitance
-
106
-
C
rss
Reverse Transfer Capacitance
V
DS
=8V, V
GS
=0V, f=1MHz
-
75
-
pF
t
d(on)
Turn-on Delay Time
-
8.1
-
t
r
Turn-on Rise Time
-
9.95
-
t
d(off)
Turn-off Delay Time
-
21.85
-
t
f
Turn-off Fall Time
V
DD
=10V, I
D
=1A, V
GS
=4.5V
R
GEN
=6
-
5.35
-
ns
Drain-Source Diode Characteristics
I
S
Maximum Diode Forward Current
-
-
1.7
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.7A
-
-
1.2
V
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
G
S
D
R
D
V
DD
V
OUT
V
IN
R
G
V
GEN
Switching
Test Circuit
t
d(on)
t
on
t
r
90%
10%
50%
10%
Input, V
IN
Output, V
OUT
t
d(off)
t
off
t
f
90%
10%
Inverted
90%
50%
Pulse Width
Switching
Waveforms
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