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參數(shù)資料
| 型號(hào)： | H9435S |
| 廠商： | HSMC CORP. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) |
| 中文描述： | P通道增強(qiáng)型MOSFET（- 30V的，- 5.3A） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | H9435S |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
H9435S
HSMC Product Specification
Electrical Characteristics
(T
A
=25
°
C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
30
-
-
V
V
GS
=-4.5V, I
D
=-4.2A
-
82
90
R
DS(on)
Drain-Source On-State Resistance
V
GS
=-10V, I
D
=-5.3A
-
50
60
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
-
-
-1
uA
I
GSS
Gate-Body Leakage Current
V
GS
=
±
20V, V
DS
=0V
-
-
±
100
nA
g
FS
Forward Transconductance
V
DS
=-15V, I
D
=-5.3A
4
7
-
S
Dynamic
Q
g
Total Gate Charge
-
9.52
-
Q
gs
Gate-Source Charge
-
3.43
-
Q
gd
Gate-Drain Charge
V
DS
=-15V, I
D
=-5.3A, V
GS
=-10V
-
1.71
-
nC
C
iss
Input Capacitance
-
551.57
-
C
oss
Output Capacitance
-
90.96
-
C
rss
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHz
-
60.79
-
PF
t
d(on)
Turn-on Delay Time
-
10.8
-
t
r
Turn-on Rise Time
-
2.33
-
t
d(off)
Turn-off Delay Time
-
22.53
-
t
f
Turn-off Fall Time
V
DD
=10V, R
L
=15
, I
D
=-1A,
V
GEN
=-10V, R
G
=6
-
3.87
-
Ns
Drain-Source Diode Characteristics
I
S
Maximum Diode Forward Current
-
-
-1.9
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=-5.3A
-
-
-1.3
V
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
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