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參數(shù)資料
| 型號(hào)： | H8NA60FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 124K |
| 代理商： | H8NA60FI |
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
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STW8NA60-STH8NA60FI
10/10
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| H8PPH-1006G | 功能描述:DIP CABLE - HDP10H/AE10G/HDP10H RoHS:是 類別:電纜組件 >> 矩形 系列:- 產(chǎn)品目錄繪圖:C3(A,B,C,D)E Series 標(biāo)準(zhǔn)包裝:1 系列:- 連接器類型:插口至卡邊 位置數(shù):20 行數(shù):2 間距 - 連接器:0.100"（2.54mm） 間距 - 線纜:0.050"（1.27mm） 長度:0.500'（152.40mm，6.00"） 特點(diǎn):應(yīng)力消除 顏色:多色，帶狀 屏蔽:無屏蔽 使用:- 電纜端接:IDC 觸點(diǎn)表面涂層:錫 觸點(diǎn)涂層厚度:100µin（2.54µm） 產(chǎn)品目錄頁面:36 (CN2011-ZH PDF) 其它名稱:C3BES-2006M |
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