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參數資料
| 型號： | H5N5001FM |
| 英文描述： | Datasheet|ADE-208-1380|MAR.20.01|50K |
| 中文描述： | 技術資料|腺- 208 - 1380 | MAR.20.01 | 5萬 |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 49K |
| 代理商： | H5N5001FM |
H5N5001FM
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source leak current
I
GSS
—
—
±
0.1
μ
A
μ
A
V
GS
=
±
30V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 2.5A, V
GS
= 10V
Note4
Zero gate voltege drain current I
DSS
Gate to source cutoff voltage
—
—
1
V
GS(off)
R
DS(on)
3.0
—
4.0
V
Static drain to source on state
resistance
—
1.1
1.5
Forward transfer admittance
|y
fs
|
Ciss
3.0
4.5
—
S
I
D
= 2.5A, V
DS
= 10V
Note4
V
DS
= 25V
V
GS
= 0
f = 1MHz
Input capacitance
—
580
—
pF
Output capacitance
Coss
—
70
—
pF
Reverse transfer capacitance
Crss
—
13
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
Qg
—
20
—
ns
I
D
= 2.5A
V
GS
= 10V
R
L
= 100
R
g
= 10
V
DD
= 400V
V
GS
= 10V
I
D
= 5A
I
F
= 5A, V
GS
= 0
Rise time
—
15
—
ns
Turn-off delay time
—
65
—
ns
Fall time
—
15
—
ns
Total gate charge
—
15
—
nC
Gate to source charge
Qgs
—
3
—
nC
Gate to drain charge
Qgd
—
8
—
nC
Body–drain diode forward
voltage
V
DF
—
0.85
1.3
V
Body–drain diode reverse
recovery time
t
rr
—
400
—
ns
I
= 5A, V
= 0
diF/ dt =100A/
μ
s
Body–drain diode reverse
recovery charge
Note:
4. Pulse test
Q
rr
—
1.5
—
μ
C
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相關代理商/技術參數 |
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| H5N5001FM_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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