參數(shù)資料
型號(hào)： H1P
廠商： NXP Semiconductors N.V.
英文描述： NPN/NPN resistor-equipped transistors R1 = 47 kohm, R2 = open
中文描述： NPN/NPN配電阻型晶體管；R1=47千歐姆，R2=開路
文件頁數(shù)： 4/8頁
文件大?。?/td> 47K
代理商： H1P
9397 750 14463
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 29 April 2005
4 of 8
Philips Semiconductors
PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 k
, R2 = open
7.
Characteristics
Table 8:
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per transistor
I
CBO
collector-base cut-off
current
I
CEO
collector-emitter
cut-off current
Characteristics
Conditions
Min
Typ
Max
Unit
V
CB
= 50 V; I
E
= 0 A
-
-
100
nA
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0 A
-
-
-
-
1
50
μ
A
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
-
-
100
nA
h
FE
V
CEsat
V
CE
= 5 V; I
C
= 1 mA
I
C
= 10 mA; I
B
= 0.5 mA
100
-
-
-
-
150
mV
R1
C
c
33
-
47
-
61
2.5
k
pF
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
40
°
C
Fig 1.
DC current gain as a function of collector
current; typical values
I
C
/I
B
= 20
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
40
°
C
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa182
I
C
(mA)
10
1
10
2
10
1
10
3
h
FE
10
2
(1)
(2)
(3)
I
C
(mA)
1
10
2
10
006aaa183
10
2
10
3
V
CEsat
(mV)
10
(1)
(2)
(3)
相關(guān)PDF資料
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