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參數資料
| 型號： | H11G1VM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.3 to 4.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER |
| 文件頁數： | 3/8頁 |
| 文件大小： | 138K |
| 代理商： | H11G1VM |
H
2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
www.fairchildsemi.com
3
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Characteristic
EMITTER
V
F
Forward Voltage
V
F
T
A
BV
R
Reverse Breakdown
Voltage
C
J
Junction Capacitance
Transfer Characteristics
Symbol
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
Isolation Characteristics
Symbol
V
ISO
Isolation Voltage
R
ISO
Isolation Resistance
C
ISO
Isolation Capacitance
*All Typical values at T
A
= 25°C
Test Conditions
Device
Min.
Typ.*
Max.
Unit
I
F
= 10mA
All
All
1.3
-1.8
1.50
V
Forward Voltage
Temp. Coefficient
mV/°C
I
R
= 10μA
All
3.0
25
V
V
V
V
F
= 0V, f = 1MHz
= 1V, f = 1MHz
= 3.0V
All
50
65
pF
F
I
R
Reverse Leakage
Current
R
All
0.001
10
μA
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1.0mA, I
F
= 0
H11G1M
H11G2M
H11G3M
H11G1M
H11G2M
H11G3M
All
H11G1M
H11G2M
H11G3M
H11G1M
H11G2M
100
80
55
100
80
55
7
V
BV
CBO
Collector to Base
I
C
= 100μA
V
BV
I
EBO
Emitter to Base
Leakage Current
Collector to Emitter
10
V
nA
CEO
V
V
V
V
V
CE
= 80V, I
= 60V, I
= 30V, I
= 80V, I
= 60V, I
F
= 0
= 0
= 0
= 0, T
= 0, T
100
CE
F
CE
F
CE
F
A
= 80°C
= 80°C
100
μA
CE
F
A
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
I
I
F
= 10mA, V
= 1mA, V
CE
= 1V
= 5V
H11G1M/2M
H11G1M/2M
100 (1000)
5 (500)
2 (200)
mA (%)
F
CE
H11G3M
H11G1M/2M
H11G1M/2M
H11G3M
V
CE(SAT)
Saturation Voltage
I
I
I
F
= 16mA, I
= 1mA, I
= 20mA, I
C
= 1mA
= 50mA
= 50mA
0.85
0.75
0.85
1.0
1.0
1.2
V
F
C
F
C
SWITCHING TIMES
t
ON
t
OFF
Turn-on Time
Turn-off Time
R
V
Pulse Width
L
CE
= 100
= 5V, f
, I
≤
F
30Hz,
≤
300μs
= 10mA,
All
5
μs
μs
All
100
Characteristic
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 500 VDC
f = 1MHz
Device
All
All
All
Min.
7500
10
Typ.*
Max.
Units
PEAK
pF
V
AC
11
0.2
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| H11G2.300 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER |
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