參數(shù)資料
型號： H11D4W
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 光電耦合器
英文描述： HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
中文描述： 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝： LEAD FREE, DIP-6
文件頁數(shù)： 2/8頁
文件大小： 382K
代理商： H11D4W
8/9/00 200046A
H11D1, H11D2, H11D3, H11D4, 4N38
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C Unless otherwise specified.)
Characteristic
EMITTER
*Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
(I
F
= 10 mA)
V
F
ALL
1.15
1.5
V
!
V
F
!
T
A
BV
R
ALL
-1.8
mV/
°
C
(I
R
= 10 μA)
ALL
ALL
ALL
ALL
6
25
50
65
0.05
V
pF
pF
μA
Junction Capacitance
(V
F
= 0 V, f = 1 MHz)
(V
F
= 1 V, f = 1 MHz)
C
J
*Reverse Leakage Current
DETECTOR
*Breakdown Voltage
Collector to Emitter
(V
R
= 6 V)
(R
BE
= 1 M
"
)
(I
C
= 1.0 mA, I
F
= 0)
(No R
BE
) (I
C
= 1.0 mA)
I
R
10
BV
CER
H11D1/2
H11D3/4
4N38
H11D1/2
H11D3/4
4N38
4N38
ALL
300
200
80
300
200
80
7
7
BV
CEO
V
*Collector to Base
(I
C
= 100 μA, I
F
= 0)
BV
CBO
Emitter to Base
Emitter to Collector
(I
E
= 100 μA , I
F
= 0)
BV
EBO
BV
ECO
10
(V
CE
= 200 V, I
F
= 0, T
A
= 25
°
C)
(V
CE
= 200 V, I
F
= 0, T
A
= 100
°
C)
(V
CE
= 100 V, I
F
= 0, T
A
= 25
°
C)
(V
CE
= 100 V, I
F
= 0, T
A
= 100
°
C)
(No R
BE
) (V
CE
= 60 V, I
F
= 0, T
A
= 25
°
C)
H11D1/2
100
250
100
250
50
nA
μA
nA
μA
nA
*Leakage Current
Collector to Emitter
(R
BE
= 1 M
"
)
I
CER
H11D3/4
I
CEO
4N38
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
DETECTOR
*Power Dissipation @ T
A
= 25
°
C
Derate linearly above 25
°
C
Symbol
Value
Units
300
mW
P
D
4.0
300
200
80
300
200
80
mW/
°
C
H11D1 - H11D2
H11D3 - H11D4
*Collector to Emitter Voltage
V
CER
4N38
H11D1 - H11D2
H11D3 - H11D4
V
*Collector Base Voltage
V
CBO
4N38
*Emitter to Collector Voltage
H11D1 - H11D2
H11D3 - H11D4
V
ECO
7
Collector Current (Continuous)
100
mA
ABSOLUTE MAXIMUM RATINGS
(Cont.)
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