參數(shù)資料
型號(hào): H11D1
廠(chǎng)商: VISHAY SEMICONDUCTORS
元件分類(lèi): 光電耦合器
英文描述: Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
中文描述: Transistor Output Optocouplers HV Phototransistor
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 109K
代理商: H11D1
www.vishay.com
290
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83611
Rev. 1.6, 10-Dec-08
H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection,
High BV
CER
Voltage
Note
T
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Note
Switching times measurement-test circuit and waveforms
OUTPUT
Collector emitter breakdown voltage
I
CE
= 1 mA, R
BE
= 1 M
Ω
H11D1
H11D2
H11D3
H11D4
BV
CER
BV
CER
BV
CER
BV
CER
BV
EBO
C
CE
C
CB
C
EB
R
th
300
300
200
200
7
V
V
V
V
V
pF
pF
pF
K/W
Emitter base breakdown voltage
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Coupling capacitance
I
EB
= 100 μA
V
CE
= 10 V, f = 1 MHz
V
CB
= 10 V, f = 1 MHz
V
EB
= 5 V, f = 1 MHz
7
8
38
250
C
C
0.6
pF
Current transfer ratio
I
F
= 10 mA, V
= 10 V,
R
BE
= 1 M
Ω
I
F
= 10 mA, I
C
= 0.5 mA,
R
BE
= 1 M
Ω
I
C
/I
F
20
%
Collector emitter,
saturation voltage
V
CEsat
0.25
0.4
V
Collector emitter, leakage current
V
CE
= 200 V, R
BE
= 1 M
Ω
H11D1
H11D2
H11D1
H11D2
I
CER
I
CER
I
CER
I
CER
100
100
250
250
nA
nA
μA
μA
V
CE
= 300 V, R
= 1 M
Ω
,
T
amb
= 100 °C
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I
F
= 10 mA, V
CE
= 10 V,
R
BE
= 1 M
Ω
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Current transfer ratio
CTR
20
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Turn-on time
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
t
on
5
μs
Rise time
t
r
2.5
μs
Turn-off time
t
off
6
μs
Fall time
t
f
5.5
μs
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
相關(guān)PDF資料
PDF描述
H11D1-X009T Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD T/R
H11D1-X007 Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD
H11D1-X007T H11D1, H11D2, H11D3, H11D4 - Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage
H12CA4825PH TRIGGER OUTPUT SOLID STATE RELAY, 4000 V ISOLATION-MAX
H12CA4825G-10 TRIGGER OUTPUT SOLID STATE RELAY, 4000 V ISOLATION-MAX
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H11D1 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P 制造商:Vishay Semiconductors 功能描述:Optocoupler
H11D1.300 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P
H11D1.300 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P
H11D1.S 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P
H11D1.S 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P