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參數(shù)資料
| 型號： | H11C6 |
| 廠商： | ISOCOM COMPONENTS LTD |
| 元件分類： | 光電耦合器 |
| 英文描述： | Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓400V的光耦合/隔離器) |
| 中文描述： | 1 CHANNEL SCR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 76K |
| 代理商： | H11C6 |
DB92010-AAS/A4
0 1 2 3 4
On state voltage V
T
( V )
Maximum Transient Thermal Impedence
0 0.2 0.4 0.6 0.8 1.0
On state current (
Α
)
O
T
On State Characteristics
N
D
)
25 50 75 100
Ambient temperature T
A
( °C )
C
s
dV/dt vs. Ambient temperature
Holding Current vs. Ambient
Temperature
H
H
μ
A
10
Normalized to
V
AK
= 50V
R
GK
=10k
T
A
= 25 °C
R
GK
=300
10k
27k
56k
1k
0.001 0.01 0.1 1 2 4 10 100
Time (seconds)
T
Off State Forward Current vs.
Ambient Temperature
Ambient temperature T
A
( °C )
0 25 50 75 100
Normalized to
V
AK
= 50V
T
A
= 25 °C
On State Current vs. Maximum
Allowable Temperature
M
10
100
90
0
1
2
4
10
20
40
100
200
400
2000
1000
4000
10000
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature T
A
( °C )
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device
.
Junction to ambient
Jio
1
2
4
10
20
40
100
200
400
1000
V
AK
= 400V
V
AK
= 50V
20
40
100
200
400
1000
4000
2000
10000
V
AK
= 200V
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
1.
2.
4.
3.
20
30
40
50
60
70
80
R
GK
=300
10k
27k
56k
1k
0.1
1
10
40
100
4
0.4
400
1000
J
J
Increases to forward
breakover voltage
0.01
0.02
0.04
0.1
0.2
0.4
1
2
5/12/00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H11D2M | IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 4; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.2; Package Code: PTSP0008JB-B (TTP-8DV) |
| H11D3M | IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV) |
| H11D4 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D4300 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D4300W | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H11C6 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER SCR O/P |
| H11C6 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER SCR O/P |
| H11C6.S | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER SCR O/P |
| H11C6.S | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER SCR O/P |
| H11C6-004 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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