參數(shù)資料
型號(hào)： H11C5
廠商： ISOCOM COMPONENTS LTD
元件分類： 光電耦合器
英文描述： Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓400V的光耦合/隔離器)
中文描述： 1 CHANNEL SCR OUTPUT OPTOCOUPLER
封裝： PLASTIC, DIP-6
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 76K
代理商： H11C5
DB92010-AAS/A4
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
1.2
1.5
V
V
I
F
= 10mA
I
R
= 10
μ
A
3
Output
(note 2)
Peak Off-state Voltage (V
DM
)
H11C1, H11C2, H11C3
200
V
R
GK
=10k
,
I
D
=
50μ
A,
T
A
= 100°C
R
GK
=10k
,
I
D
=
150μ
A,
T
A
=100°C
H11C4, H11C5, H11C6
400
V
Peak Reverse Voltage (V
RM
)
H11C1, H11C2, H11C3
200
V
R
GK
=10k
,
I
D
=
50μ
A,
T
A
=100°C
R
GK
=10k
,
I
D
=
150μ
A,
T
A
=100°C
H11C4, H11C5, H11C6
400
V
On-state Voltage (V
TM
)
1.1
1.3
V
I
TM
= 300mA
Off-state Current (I
)
H11C1, H11C2, H11C3
50
μ
A
R
GK
=10k
,
I
F
=
0
,
V
DM
=200V, T
A
=100°C
R
GK
=10k
,
I
F
=
0
,
V
DM
=400V, T
A
=100°C
H11C4, H11C5, H11C6
150
μ
A
Reverse Current (I
)
H11C1, H11C2, H11C3
50
μ
A
R
GK
=10k
,
I
F
=
0
,
V
DM
=200V, T
A
=100°C
R
GK
=10k
,
I
F
=
0
,
V
DM
=400V, T
A
=100°C
H11C4, H11C5, H11C6
150
μ
A
Coupled
Input Current to Trigger ( I
) (note 2)
H11C1, H11C2, H11C4, H11C5
H11C3, H11C6
H11C1, H11C2, H11C4, H11C5
H11C3, H11C6
Coupled dv/dt, Input to Output (dv/dt)
Input to Output Isolation Voltage V
ISO
20
30
11
14
mA
mA
mA
mA
V/
μ
s
V
RMS
V
PK
pF
V
AK
=50V, R
GK
=10k
V
AK
=50V, R
GK
=10k
V
AK
=100V, R
GK
=27k
V
AK
=100V, R
GK
=27k
500
5300
7500
10
11
See note 1
See note 1
V
= 500V (note 1)
V = 0, f =1MHz
Input-output Isolation Resistance R
ISO
Input-output Capacitance
Cf
2
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
5/12/00
相關(guān)PDF資料
PDF描述
H11C6 Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓400V的光耦合/隔離器)
H11D2M IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 4; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.2; Package Code: PTSP0008JB-B (TTP-8DV)
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