參數(shù)資料
型號(hào): H11C2
廠商: ISOCOM COMPONENTS LTD
元件分類: 光電耦合器
英文描述: Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓200V的光耦合/隔離器)
中文描述: 1 CHANNEL SCR OUTPUT OPTOCOUPLER
封裝: PLASTIC, DIP-6
文件頁數(shù): 1/4頁
文件大?。?/td> 76K
代理商: H11C2
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
DB92010-AAS/A4
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 2 available lead forms : -
- STD
-
G form
DESCRIPTION
The H11C_ series are optically coupled isolators
consisting of infrared light emitting diode and a
light activated silicon controlled rectifier in a
standard 6pin dual in line plastic package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV
,7.5kV
PK
)
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High Surge Anode Current (5.0 A)
High Blocking Voltage (200V*
1
, 400V*
1
)
Low Turn on Current (5mA typical)
All electrical parameters 100% tested
Custom electrical selections available
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APPLICATIONS
10A, T
2
L compatible, Solid State Relay
25W Logic Indicator Lamp Driver
400V Symmetrical transistor coupler
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H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X
H11C1, H11C2, H11C3, H11C4, H11C5, H11C6
PHOTON COUPLED ISOLATOR Ga As
INFRARED EMITTING DIODE &
LIGHT ACTIVATED SCR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
Operating Temperature
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
-55°C to + 150°C
-55°C to + 100°C
INPUT DIODE
Forward Current
Forward Current (Peak)
(1
μ
s pulse, 300 pps)
Reverse Voltage
Power Dissipation
60mA
3A
6V
100mW
DETECTOR
Peak Forward Voltage
H11C1, H11C2, H11C3
H11C4, H11C5, H11C6
Peak Reverse Gate Voltage
RMS On-state Current
Peak On-state Current
(100
μ
s, 1% duty cycle)
Surge Current (10ms)
Power Dissipation
200V*
1
400V*
1
6V
300mA
10A
5A
300mW
*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (R
GK
< 56k
)
1
3
4
6
2
5
Dimensions in mm
2.54
7.0
6.0
7.62
max.
0.5
min.
3.9
3.1
5.1
max.
15°
Max
0.25
0.48
8.3 max.
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
5/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
相關(guān)PDF資料
PDF描述
H11C3 Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓200V的光耦合/隔離器)
H11C4 Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓400V的光耦合/隔離器)
H11C5 Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓400V的光耦合/隔離器)
H11C6 Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓400V的光耦合/隔離器)
H11D2M IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 4; Condition ICES at VCE=400V,VGE=0V (&#181;A): 10; Condition IGES at VGE=VGES,VCE=0V (&#181;A): &#177;10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.2; Package Code: PTSP0008JB-B (TTP-8DV)
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