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參數(shù)資料
| 型號： | H11B2-X009 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN |
| 中文描述： | Transistor Output Optocouplers Photodarlington Out Single CTR 200% |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 111K |
| 代理商： | H11B2-X009 |
www.vishay.com
284
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83609
Rev. 1.6, 10-Dec-08
H11B1, H11B2, H11B3
Vishay Semiconductors
Optocoupler, Photodarlington
Output, High Gain,
with Base Connection
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
V
ISO
5300
V
RMS
≥
7
≥
7
mm
mm
CTI
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
P
tot
≥
10
12
≥
10
11
260
3.5
Ω
Ω
Total package dissipation (LED plus detector)
Derate linearly from 25 °C
Storage temperature
Operating temperature
Lead soldering time at 260 °C
mW
mW/°C
°C
°C
s
T
stg
T
amb
- 55 to + 150
- 55 to + 100
10
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
I
F
= 50 mA
H11B1
H11B2
H11B3
V
F
V
F
V
F
I
R
C
j
1.1
1.1
1.1
1.5
1.5
1.5
10
V
V
V
μA
pF
I
F
= 10 mA
V
R
= 3 V
V
F
= 0 V, f = 1 MHz
Reverse current
Junction capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
Saturation voltage collector-emitter
Capacitance (input to output)
50
I
C
= 1 mA, I
F
= 0 mA
I
E
= 100μA, I
F
= 0 mA
I
C
= 100 μA , I
F
= 0 mA
V
CE
= 10 V, I
F
= 0 mA
BV
CEO
BV
ECO
BV
CBO
I
CEO
30
7
30
V
V
V
nA
100
I
C
= 1 mA, I
C
= 1 mA
V
CEsat
C
IO
1
V
pF
0.5
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
H11B1
H11B2
H11B3
SYMBOL
CTR
DC
CTR
DC
CTR
DC
MIN.
500
200
100
TYP.
MAX.
UNIT
%
%
%
DC current transfer ratio
V
CE
= 5 V, I
F
= 1 mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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| H11B2-X009T | 功能描述:晶體管輸出光電耦合器 Photodarlington Out Single CTR 200% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11B3 | 功能描述:晶體管輸出光電耦合器 Photodarlington Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11B3 | 制造商:Vishay Semiconductors 功能描述:OPTOCOUPLER |
| H11B3_Q | 功能描述:晶體管輸出光電耦合器 DIP-6 PHOTO DARL RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11B3-004 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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