參數(shù)資料
型號: H11AA1-X009T
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: OPTOCOUPL AC-IN 1CH TRANS W/BASE DC-OUT 6PDIP SMD - Tape and Reel
中文描述: Transistor Output Optocouplers Phototransistor Out AC-In Single CTR 20%
文件頁數(shù): 2/7頁
文件大?。?/td> 140K
代理商: H11AA1-X009T
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83608
Rev. 1.7, 23-Feb-11
H11AA1
Vishay Semiconductors
Optocoupler, Phototransistor Output,
AC Input, with Base Connection
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Power dissipation
Derate linearly from 25 °C
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
COUPLER
Between emitter and detector,
referred to standard climate
23 °C/50% RH, DIN 50014
Creepage distance
Clearance distance
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature range
Operating temperature range
Lead soldering time at 260 °C
SYMBOL
VALUE
UNIT
I
F
± 60
100
1.3
mA
mW
mW/°C
P
diss
P
diss
200
2.6
30
5
70
mW
mW/°C
V
V
V
BV
CEO
BV
EBO
BV
CBO
Isolation test voltage (RMS)
V
ISO
5300
V
RMS
7
7
175
10
12
10
11
mm
mm
CTI
R
IO
R
IO
T
stg
T
amb
T
sld
Isolation resistance
°C
°C
s
- 55 to + 150
- 55 to + 100
10
ELECTRICAL CHARACTERISTCS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= ± 10 mA
OUTPUT
Collector emitter breakdown voltage
I
C
= 1 mA
Emitter base breakdown voltage
I
E
= 100 μA
Collector base breakdown voltage
I
C
= 100 μA
Collector emitter leakage current
V
CE
= 10 V
COUPLER
Collector emitter saturation voltage
I
F
= ± 10 mA, I
C
= 0.5 mA
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
1.2
1.5
V
BV
CEO
BV
EBO
BV
CBO
I
CEO
30
5
70
V
V
V
nA
5
100
V
CEsat
0.4
V
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
DC current transfer ratio
I
F
= ± 10 mA, V
CE
= 10 V
Symmetry
(CTR at + 10 mA)/(CTR at - 10 mA)
SYMBOL
CTR
DC
MIN.
20
TYP.
MAX.
UNIT
%
0.33
1
3
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