參數(shù)資料
型號： H11A1-X009
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD Tube
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR 20%
文件頁數(shù)： 2/8頁
文件大小： 109K
代理商： H11A1-X009
www.vishay.com
272
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83730
Rev. 1.5, 08-May-08
H11A1/H11A2/H11A3/H11A4/H11A5
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
6
V
60
2.5
100
mA
A
mW
t
≤
10 μs
V
CEO
V
EBO
I
C
I
C
P
diss
70
7
50
100
150
V
V
Collector current
mA
mA
mW
t < 1 ms
Power dissipation
COUPLER
Isolation test voltage
Creepage distance
Clearance distance
Insulation thickness between emitter
and detector
Comparative tracking index
V
ISO
5300
≥
7
≥
7
V
RMS
mm
mm
≥
0.4
mm
per DIN IEC 112/VDE 0303, part 1
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
175
≥
10
12
≥
10
11
Isolation resistance
R
IO
R
IO
T
stg
T
amb
T
j
Ω
Ω
°C
°C
°C
Storage temperature range
Operating temperature range
Junction temperature
- 55 to + 150
- 55 to + 100
100
Soldering temperature
max. 10 s, dip soldering: distance to seat-
ing plane
≥
1.5 mm
T
sld
260
°C
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
I
F
= 10 mA
H11A1
H11A2
H11A3
H11A4
H11A5
V
F
V
F
V
F
V
F
V
F
I
R
C
O
1.1
1.1
1.1
1.1
1.1
1.5
1.5
1.5
1.5
1.7
10
V
V
V
V
V
μA
pF
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
Emitter collector capacitance
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
50
I
C
= 1 mA, I
F
= 0 mA
I
E
= 100 μA, I
F
= 0 mA
I
C
= 10 μA, I
F
= 0 mA
V
CE
= 10 V, I
F
= 0 mA
V
CE
= 0 V
BV
CEO
BV
ECO
BV
CBO
I
CEO
C
CE
30
7
70
V
V
V
nA
pF
5
6
50
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