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參數(shù)資料
| 型號(hào)： | H02N60J |
| 廠商： | HSMC CORP. |
| 英文描述： | N-Channel Power Field Effect Transistor |
| 中文描述： | N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 74K |
| 代理商： | H02N60J |
HI-SINCERITY
MICROELECTRONICS CORP.
H02N60 Series
N-Channel Power Field Effect Transistor
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 1/6
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Value
2
8
±
20
Units
A
A
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H02N60I (TO-251) / H02N60J (TO-252)
H02N60E (TO-220AB)
H02N60F (TO-220FP)
Derate above 25
°
C
H02N60I (TO-251) / H02N60J (TO-252)
H02N60E (TO-220AB)
H02N60F (TO-220FP)
V
50
50
25
W
P
D
0.4
0.4
0.33
W/
°
C
T
j
, T
stg
Operating and Storage Temperature Range
-55 to 150
°
C
E
AS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
°
C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25
)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
35
mJ
T
L
260
°
C
H02N60 Series Pin Assignment
1
2
3
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
1
2
3
Tab
H02N60 Series
Symbol:
G
D
S
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PDF描述 |
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| H06N60 | N-Channel Power Field Effect Transistor |
| H1084-3.3E | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV06; No. of Contacts:24; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| H1084E | 5.0 AMP POSITIVE VOLTAGE REGULATOR |
| H1084-3.3U | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV06; No. of Contacts:29; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| H1084U | 5.0 AMP POSITIVE VOLTAGE REGULATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H02N60S | 制造商:HSMC 制造商全稱:HSMC 功能描述:N-Channel Power Field Effect Transistor |
| H02N60SE | 制造商:HSMC 制造商全稱:HSMC 功能描述:N-Channel Power Field Effect Transistor |
| H02N60SF | 制造商:HSMC 制造商全稱:HSMC 功能描述:N-Channel Power Field Effect Transistor |
| H02N60SI | 制造商:HSMC 制造商全稱:HSMC 功能描述:N-Channel Power Field Effect Transistor |
| H02N60SJ | 制造商:HSMC 制造商全稱:HSMC 功能描述:N-Channel Power Field Effect Transistor |
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