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參數(shù)資料
| 型號： | GW40NC60WD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT |
| 中文描述： | N溝道40A條- 600V的-對247非?？焖買GBT的開關(guān)PowerMESH |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 269K |
| 代理商： | GW40NC60WD |
Electrical characteristics
STGW40NC60WD
4/14
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
V
BR(CES)
Collector-emitter breakdown
voltage
I
C
= 1mA, V
GE
= 0
600
V
V
CE(SAT)
Collector-emitter saturation
voltage
V
GE
= 15V, I
C
= 30A, Tj= 25°C
V
GE
= 15V, I
C
= 30A, Tj= 125°C
2.1
1.9
2.5
V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250μA
3.75
5.75
V
I
CES
Collector-emitter leakage
current (V
CE
= 0)
V
GE
= Max rating,Tc=25°C
V
GE
= Max rating, Tc=125°C
50
3
μA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20V , V
CE
= 0
±100
nA
g
fs
Forward transconductance
V
CE
= 15V
,
I
C
= 30A
20
S
Table 4.
Dynamic
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
2900
298
59
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V, I
C
= 30A,
V
GE
= 15V,
(see Figure 16)
126
16
46
nC
nC
nC
I
CL
Turn-off SOA Minimum
current
V
clamp
= 480V
,
Tj = 150°C
R
G
= 10
,
V
GE
= 15V
230
A
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