參數(shù)資料
型號: GW30N90D
廠商: 意法半導(dǎo)體
英文描述: N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT
中文描述: N溝道900V - 30A條-對247 IGBT的非??焖貾owerMESH
文件頁數(shù): 3/10頁
文件大小: 146K
代理商: GW30N90D
STGW30N90D
Electrical ratings
3/10
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GS
= 0)
900
V
I
C (1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at 25°C
60
A
I
C (1)
Collector current (continuous) at 100°C
30
A
I
CL (2)
2.
Vclamp=900V, Tj=125°C, R
G
=10
, V
GE
=15V
Collector current (pulsed)
135
A
V
GE
Gate-emitter voltage
±25
V
P
TOT
Total dissipation at T
C
= 25°C
220
W
I
f
Diode RMS forward current at T
C
= 25°C
30
A
T
j
Operating junction temperature
–55 to 150
°C
T
stg
Storage temperature
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.57
°C/W
Rthj-amb
Thermal resistance junction-ambient (diode)
1.6
°C/W
Rthj-amb
Thermal resistance junction-ambient (IGBT)
50
°C/W
ICTC
)
C
)
)
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