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參數(shù)資料
| 型號(hào)： | GTT8205S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 338K |
| 代理商： | GTT8205S |
G
G
T
T
T
T
8
8
2
2
0
0
5
5
S
S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GTT8205S provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
* Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
GTT8205S
Page: 1/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Millimeter
Min.
1.10 MAX.
0
0.70
0.12 REF.
2.70
2.60
1.40
Millimeter
Min.
0.45 REF.
0.60 REF.
0°
0.30
0.95 REF.
1.90 REF.
REF.
Max.
REF.
Max.
A
A1
A2
c
D
E
E1
L
L1
b
e
e1
0.10
1.00
10°
0.50
3.10
3.00
1.80
Absolute Maximum Ratings
Parameter
Symbol
V
DS
V
GS
I
D
@T
A
=25
к
I
D
@T
A
=70
к
I
DM
P
D
@T
A
=25
к
Tj, Tstg
Ratings
20
±8
6
4.8
20
1.14
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
к
к
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@4.5V
Continuous Drain Current
3
, V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
110
Unit
/
к
W
Pb Free Plating Product
BV
DSS
20V
R
DS(ON)
28m
I
D
6A
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