| 型號(hào): | GT60M302 |
| 元件分類: | 開(kāi)關(guān) |
| 英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件頁(yè)數(shù): | 1/7頁(yè) |
| 文件大小: | 525K |
| 代理商: | GT60M302 |

相關(guān)PDF資料 |
PDF描述 |
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| GT20D201-Y | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
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| GS9012D/E7 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| GT40T101 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| GSTU8040 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GT60M303 | 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 900V 60A 3PIN TO-3P(LH) - Rail/Tube |
| GT60M303(Q) | 功能描述:IGBT 晶體管 900V/60A DIS+FRD Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| GT60M303-Q | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER SWITCHING APPLICATIONS |
| GT60M322 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT60M323 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT Voltage Resonance Inverter Switching Application |