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參數(shù)資料
| 型號(hào)： | GSS9926 |
| 廠商： | GTM CORPORATION |
| 英文描述： | Automotive Relays; V23134B0053C642 ( Tyco Electronics ) |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 330K |
| 代理商： | GSS9926 |
GSC4418
Page: 2/4
ISSUED DATE :2006/10/27
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
1.5
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
22
-
S
VDS=5V, ID=10A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=30V, VGS=0
Drain-Source Leakage Current(Tj=55 )
:
IDSS
-
5
uA
VDS=24V, VGS=0
-
14
VGS=20V, ID=11.5A
-
17
VGS=10V, ID=10.0A
Static Drain-Source On-Resistance
RDS(ON)
-
40
m
VGS=4.5V, ID=5.0A
Total Gate Charge2
Qg
-
8.6
-
Gate-Source Charge
Qgs
-
2.5
-
Gate-Drain (“Miller”) Change
Qgd
-
4.9
-
nC
ID=11.5A
VDS=15V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
5.4
-
Rise Time
Tr
-
5.1
-
Turn-off Delay Time
Td(off)
-
14.4
-
Fall Time
Tf
-
3.7
-
ns
VDS=15V
VGS=10V
RG=3
RL=1.3
Input Capacitance
Ciss
-
758
-
Output Capacitance
Coss
-
180
-
Reverse Transfer Capacitance
Crss
-
128
-
pF
VGS=0V
VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.0
V
IS=1.0A, VGS=0V
Continuous Source Current (Body Diode)
IS
-
4.3
A
VD= VG=0V, VS=1.0V
Reverse Recovery Time2
Trr
-
16.9
-
ns
Reverse Recovery Charge
Qrr
-
6.6
-
nC
IS=11.5A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
:
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