參數(shù)資料
型號: GSOT05-HT3-GS08
廠商: Vishay Intertechnology,Inc.
英文描述: ESD Protection Diode
中文描述: ESD保護(hù)二極管
文件頁數(shù): 2/5頁
文件大?。?/td> 105K
代理商: GSOT05-HT3-GS08
www.vishay.com
2
Document Number 85822
Rev. 1.4, 29-Apr-05
GSOT03-HT3 to GSOT36-HT3
Vishay Semiconductors
Electrical Characteristics
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Part Number
Device
Marking
Code
Rated
Stand-off
Voltage
Minimum
Breakdown
Voltage
@ 1 mA
Maximum
Clamping
Voltage
Maximum
Peak Pulse
Current
t
p
= 8/20
μ
s
I
PPM
A
18
Maximum
Leakage
Current
@ V
WM
I
D
μ
A
125
Maximum
Capacitance
@ I
PP
= 1 A
@ I
PP
= 5 A
@ 0 V, 1 MHz
V
WM
V
3.3
V
BR
V
4
V
C
V
C
pF
800
GSOT03-
HT3
GSOT04-
HT3
GSOT05-
HT3
GSOT08-
HT3
GSOT12-
HT3
GSOT15-
HT3
GSOT24-
HT3
GSOT36-
HT3
A3
6.5
7.5
A4
4
5
8.5
10.5
17
125
800
A5
5
6
9.8
12.5
17
100
550
A6
8
8.5
13.4
15
15
10
400
A7
12
13.3
19
28
12
2
185
A8
15
16.7
24
35
10
1
140
A9
24
26.7
43
60
5
1
83
AA
36
40
60
75
2
1
80
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
P
P
-
P
100
1000
10000
0.1
1.0
10
td - Pulse Duration (
μ
s )
100
1000
10000
10
300W, 8/20
μ
s waveshape
17476
Figure 2. Pulse Waveform
0
50
100
90
80
70
60
40
30
20
10
110
I
P
-
R
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
0
10
5
15
20
30
25
t - Time (
μ
s )
t
d
=I
PP
2
17477
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