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參數(shù)資料
| 型號(hào)： | GSD882S |
| 廠商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | GSD882S |
CORPORATION
1/2
ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
GSD882S
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage at Ta=25 :
VCBO
40
V
Collector to Emitter Voltage at Ta=25 :
VCEO
30
V
Emitter to Base Voltage at Ta=25 :
VEBO
5.0
V
Collector Current at Ta=25 :
IC
3.0
A
Total Power Dissipation at Ta=25 :
PD
750
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
V
IC=100uA ,IE=0
BVCEO
30
-
V
IC=1mA,IB=0
BVEBO
5
-
V
IE=10uA
ICBO
-
1
uA
VCB=30V
IEBO
-
1
uA
VEB=3V
*VCE(sat)
-
0.5
V
IC=2A, IB=0.2A
*VBE(sat)
-
2
V
IC=2A, IB=0.2A
*hFE1
30
-
VCE=2V, IC=20mA
*hFE2
100
-
500
VCE=2V, IC=1A
FT
-
90
-
MHz
VCE=5V, IC=0.1A, f=100MHz
Cob
-
45
-
Pf
VCB=10V,IE=0, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
Classification Of hFE2
Rank
Q
P
E
Range
100-200
160-320
250-500
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
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