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參數(shù)資料
| 型號(hào)： | GSC4409 |
| 廠(chǎng)商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | GSC4409 |
GSC4409
Page: 2/4
ISSUED DATE :2006/10/19
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
V
VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th)
-1.4
-
-2.7
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
50
-
S
VDS=-5V, ID=-15A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
:
-
-5
uA
VDS=-30V, VGS=0
Drain-Source Leakage Current(Tj=55 )
:
IDSS
-
-25
uA
VDS=-24V, VGS=0
-
7.5
VGS=-10V, ID=-15A
Static Drain-Source On-Resistance2
RDS(ON)
-
12
m
VGS=-4.5V, ID=-10A
Total Gate Charge2
Qg
-
100
120
Gate-Source Charge
Qgs
-
14.5
-
Gate-Drain (“Miller”) Change
Qgd
-
23
-
nC
ID=-15A
VDS=-15V
VGS=-10V
Turn-on Delay Time2
Td(on)
-
14
-
Rise Time
Tr
-
16.5
-
Turn-off Delay Time
Td(off)
-
76.5
-
Fall Time
Tf
-
37.5
-
ns
VDS=-15V
VGS=-10V
RG=3
RL=1
Input Capacitance
Ciss
-
5270
6400
Output Capacitance
Coss
-
945
-
Reverse Transfer Capacitance
Crss
-
745
-
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.0
V
IS=-1.0A, VGS=0V
Continuous Source Current (Body Diode)
IS
-
-5
A
VD= VG=0V, VS=-1.0V
Reverse Recovery Time2
Trr
-
36.7
-
ns
Reverse Recovery Charge
Qrr
-
28
-
nC
IS=-15A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
:
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| GSC4410 | 制造商:GTM 制造商全稱(chēng):GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| GSC4411DY | 制造商:GTM 制造商全稱(chēng):GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4412 | 制造商:GTM 制造商全稱(chēng):GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4413 | 制造商:GTM 制造商全稱(chēng):GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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